unisonic technologies co., ltd 4n70 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2009 unisonic technologies co., ltd qw-r502-340.a 4 amps, 700 volts n-channel power mosfet ? description the utc 4n70 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. this high speed switching power mosfet is usually used in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 2.8 ? @v gs = 10 v * ultra low gate charge ( typical 15 nc ) * low reverse transfer capacitance ( c rss = typical 8.0 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain 1 to-220f 1 to-220f1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 4N70L-TF1-T 4n70g-tf1-t to-220f1 g d s tube 4n70l-tf3-t 4n70g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
4n70 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-340.a ? absolute maximum ratings (ta = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 4.4 a continuous i d 4.0 a drain current pulsed (note 2) i dm 16 a single pulsed (note 3) e as 260 mj avalanche energy repetitive (note 2) e ar 10.6 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 36 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 30mh, i as = 4a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 4.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w junction to case jc 3.47 /w ? electrical characteristics (ta =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 700 v drain-source leakage current i dss v ds = 700 v, v gs = 0 v 10 a forward v gs = 30 v, v ds = 0 v 100 gate-source leakage current reverse i gss v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient j dss t bv i d = 250 a, referenced to 25c 0.6 v/ on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 2.2 a 2.8 ? dynamic characteristics input capacitance c iss 520 670 pf output capacitance c oss 70 90 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 8 11 pf switching characteristics turn-on delay time t d(on) 13 35 ns turn-on rise time t r 45 100 ns turn-off delay time t d(off) 25 60 ns turn-off fall time t f v dd = 350v, i d = 4.0a, r g = 25 ? (note 1, 2) 35 80 ns total gate charge q g 15 20 nc gate-source charge q gs 3.4 nc gate-drain charge q gd v ds = 560v, i d = 4.0a, v gs = 10 v (note 1, 2) 7.1 nc
4n70 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-340.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 4.4 a 1.4 v maximum continuous drain-source diode forward current i s 4.4 a maximum pulsed drain-source diode forward current i sm 17.6 a reverse recovery time t rr 250 ns reverse recovery charge q rr v gs = 0 v, i s = 4.4 a, di/dt = 100 a/ s (note 1) 1.5 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4n70 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-340.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
4n70 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-340.a ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
4n70 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-340.a ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 200 0 400 1 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 2 100 150 200 250 300 50 100 150 200 250 300 600 800 1000 1200 1400 3 4567 drain current, i d (a) drain current, i d (a) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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